Origin of multi-level switching and telegraphic noise in organic nanocomposite memory devices

نویسندگان

  • Younggul Song
  • Hyunhak Jeong
  • Seungjun Chung
  • Geun Ho Ahn
  • Tae-Young Kim
  • Jingon Jang
  • Daekyoung Yoo
  • Heejun Jeong
  • Ali Javey
  • Takhee Lee
چکیده

The origin of negative differential resistance (NDR) and its derivative intermediate resistive states (IRSs) of nanocomposite memory systems have not been clearly analyzed for the past decade. To address this issue, we investigate the current fluctuations of organic nanocomposite memory devices with NDR and the IRSs under various temperature conditions. The 1/f noise scaling behaviors at various temperature conditions in the IRSs and telegraphic noise in NDR indicate the localized current pathways in the organic nanocomposite layers for each IRS. The clearly observed telegraphic noise with a long characteristic time in NDR at low temperature indicates that the localized current pathways for the IRSs are attributed to trapping/de-trapping at the deep trap levels in NDR. This study will be useful for the development and tuning of multi-bit storable organic nanocomposite memory device systems.

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عنوان ژورنال:

دوره 6  شماره 

صفحات  -

تاریخ انتشار 2016